Method for printing wide bandgap semiconductor materials

ABSTRACT

A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers, a maximum width of 25 micrometers to 10 millimeters, and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to and the benefit of prior-filed, U.S.Provisional Application Ser. Nos. 62/743,869 filed on Oct. 10, 2018, and62/866,674 filed on Jun. 26, 2019, the contents of which are hereinincorporated by reference in their entireties.

BACKGROUND

Wide bandgap semiconductor materials such as gallium nitride (GaN)semiconductors are very attractive for use in high-power,high-temperature, and/or radiation resistant electronics. One reason GaNsemiconductors are so attractive is that they possess a band gap of adirect transition type of energy corresponding to the ultraviolet lightregion and can be combined with other group 13-nitride materials asternary or quaternary compound semiconductors to expand the bandgapenergy range to include the entirety of the visible light spectrum intothe deep ultraviolet spectrum while permitting highly efficient lightemission. One method of preparing GaN semiconductors is by growingrelatively thick layers using hydride vapor phase epitaxy (HVPE). Inthis process, growth proceeds due to the high-temperature vapor-phasereaction between gallium mono-chloride (GaCl) and ammonia. The ammoniais supplied from a standard gas source, while the GaCl is produced bypassing hydrogen chloride (HCl) gas over a liquid gallium supply. Usingthis method, GaN can be grown relatively quickly and inexpensively.Another method of producing GaN semiconductors is by metal-organicchemical vapor deposition (MOCVD). In this technique, ammonia gas (NH₃)is reacted with a metallo-organic compound containing gallium. Thereaction occurs at high temperatures in the vicinity of a substrate, andGaN is deposited epitaxially on the substrate. This technique isdisadvantageously both slow and expensive.

These techniques result in the formation of confluent GaN semiconductorlayers on the substrate that require complicated pre-masking of thesurface or etching steps to form localized areas of the GaNsemiconductor in the substrate, which further decreases throughput andincreases cost associated with fabricated devices. Accordingly, a needexists for a method of directly forming a localized GaN semiconductor ona substrate with a single process. Such a method would facilitate thedevelopment of high power, reliable GaN optoelectronic and electronicdevices with reduced cost and higher throughput over existing means.

BRIEF SUMMARY

Disclosed herein is a method for printing a wide bandgap semiconductormaterial.

In an aspect (e.g., a non-limiting, example embodiment), a method forprinting a semiconductor material includes depositing a molten metalonto a substrate in an enclosed chamber to form a trace having a maximumheight of 15 micrometers, a maximum width of 25 micrometers to 10millimeters, and/or a thin film having a maximum height of 15micrometers. The method further includes reacting the molten metal witha gas phase species in the enclosed chamber to form the semiconductormaterial.

The above described and other features are exemplified by the followingfigures, detailed description, and claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The figures are exemplary embodiments, wherein the like elements arenumbered alike. Some of the figures are illustrative of the examples,which are not intended to limit devices made in accordance with thedisclosure to the materials, conditions, or process parameters set forthherein. In the figures:

FIG. 1 is an illustration of an aspect (e.g., a non-limiting, exampleembodiment) of an enclosed chamber 2;

FIG. 2 is an illustration of an aspect of depositing a molten metal 13on a substrate 4;

FIG. 2A is an enlarged portion of FIG. 2, where the enlargement is ofthe area designated in FIG. 2 as “FIG. 2A;”

FIG. 3 is a graphical illustration of the average growth velocity withinitial melt thickness of Example 1;

FIG. 4 is a graphical illustration of the x-ray diffraction (XRD)spectrum of Example 2;

FIG. 5 is a graphical illustration of the XRD spectrum of Example 3;

FIG. 6 is a scanning electron microscope (SEM) image of a cross-sectionof the trace of Example 3;

FIG. 7 is an SEM image of a cross-section of an area proximal to thetrace of Example 3;

FIG. 8 is a graphical illustration of the XRD spectrum showing singlecrystal nature of material in Example 3; and

FIG. 9 is a graphical illustration of the XRD spectrum showing singlecrystal nature of material in Example 3.

DETAILED DESCRIPTION

Current semiconductor device architectures are limited to what isachievable using standard semiconductor device fabrication methods,which are usually a combination of thin film deposition, etching,regrowth, and other processing steps to develop a final device. Processand material limitations on material quality, process speed, dimensionalaccuracy, and achievable geometries restrict the development of newdevice architectures. With the advent of additive manufacturing, manymaterials and applications have benefited from the ability to threedimensional (3D) print complex structures. Layer by layer printingprocesses allow rapid production of complex geometries enablingsignificant capability improvements across multiple domains. To date,however, the research of additively manufactured semiconductors has beenminimal.

The lack of compound semiconductor additive manufacturing research stemsin large part from the difficulty of adapting common additivemanufacturing methods to electronic materials. Most semiconductordevices require a single-crystal material with low defect densities inorder to maintain the electrical properties necessary for deviceoperation. The presence of grain boundaries act as carrier scatteringsites that can limit the capabilities of any fabricated devices. Typicaladditive manufacturing processes involve localized melting, severeplastic strain, consolidation of randomly oriented particles, orchemical crosslinking, all of which tend to generate polycrystallinestructures. Being able to additively build semiconductor structuresthough could reduce the cost associated with more complex devicestructures that can only be formed through multiple etch and growthsteps using current processes. This benefit is of particular interestfor wide bandgap semiconductor materials such as GaN as GaN is amaterial widely used in optoelectronic, high-power, and high-frequencydevice applications due to its wide [3.4 electron Volt (eV)] directbandgap.

A method for printing a semiconductor material, referred to herein asgas-phase reactive additive manufacturing (GRAM), was developed thatcomprises depositing a molten metal onto a substrate in an enclosedchamber; and reacting the molten metal with a gas phase species in theenclosed chamber to form the semiconductor material. In other words, thegas-phase reactive additive manufacturing method can comprise printing amolten semiconductor precursor onto a substrate and reacting theprecursor with a gas phase reactant at elevated temperatures to form thesemiconductor material. Such a reaction-based process can be preferredover using a semiconductor feedstock (such as GaN) to provide animproved synthesis route with lower temperatures, better compositionalcontrol, or improved epitaxial growth. It is noted that this method canproduce any semiconductor material that can be formed by the reaction ofa gas phase species and a molten metal. For example, the method canmanufacture a silicon nitride layer, a silicon arsenide layer, a Group13 metal phosphide or arsenide layer, a gallium arsenide layer, or thelike.

The gas-phase reactive additive manufacturing method has severaladditional benefits over methods such as hydride vapor phase epitaxy ormetal-organic chemical vapor deposition. For example, the present methodcan impart controlled, localized printing of the molten metal, which canresult in the formation of complex vertical device architectures and alower dislocation density material. The present method can allow for thebottom-up printing of semiconductor materials that can eliminate variousetching and regrowth steps that can be extremely time intensive. Thepresent method can exhibit higher crystallization rates as compared toliquid phase epitaxy due to a lesser diffusion length needed for the gasphase species to travel through the molten metal and react at thesubstrate surface to form an epitaxial film. The present method canresult in the formation of a single crystal semiconductor, which is noteasily obtainable.

FIG. 1 is an illustration of an example of an enclosed chamber 2. FIG. 1illustrates that a gas phase species stream 10 comprising a gas phasespecies can allow the gas phase species to flow into the enclosedchamber 2. Likewise, an inert gas stream 12 comprising an inert gas canallow the inert gas to flow into the enclosed chamber 2. It is notedthat while the gas phase species stream 10 and the inert gas stream 12are illustrated as different streams, they could conversely beintroduced as a single stream. A purge gas stream 14 can be present toallow for gas to be removed from the enclosed chamber 2 through anoutlet or vacuum line.

A substrate 4 can be located on a stage 6 that can optionally be aheated stage 6. The stage 6 can have 1 or more directions of control, or1 to 6 directions of control, or 1 to 3 directions of control. Forexample, the stage 6 can have at least 1 direction of control allowingit to move in the z-direction such that it can raise and lower the stage6 towards an injection orifice 8 via a motor control unit 16. Theinjection orifice 8 can have 1 or more directions of control, or 1 to 6directions of control, or 1 to 3 directions of control. For example, theinjection orifice 8 can have at least 2 directions of control in the x-and y-directions via a translation control unit 18. The injectionorifice 8 can be any of a number of existing deposition mechanisms thatcan allow for the controlled deposition (for example, controlling atleast one of the volume deposited or the deposition rate) of the moltenmetal. For example, the injection orifice 8 can comprise an opening todeposit a trace (for example, a line, a spot, or the like) of the moltenmetal on the substrate 4. Conversely, the method of depositing themolten metal 13 can comprise depositing a thin film of the molten metal.The depositing of the thin film is not limited and can be performed, forexample, by flow coating, spray coating, or the like.

FIG. 2 is an illustration of an aspect (e.g., a non-limiting, exampleembodiment) of the method of forming the semiconductor material 23 inthe enclosed chamber 2. The top image in FIG. 2 shows that an amount ofa molten metal 13 can be deposited onto the substrate 4 via theinjection orifice 8. During the depositing, at least one of theinjection orifice 8 or the substrate 4 can be translated in at least anx-y plane to form a trace of the molten metal 13 on the substrate 4. Thetrace can have a maximum height of 15 micrometers, or 1 to 12micrometers. The trace can have a maximum width of 25 micrometers to 10millimeters, or 100 micrometers to 2 millimeters. The trace can be inthe form of at least one of a line, a spot, or the like. If the moltenmetal 13 is deposited to form a thin film, then the thin film can have amaximum height of 15 micrometers, or 1 to 12 micrometers.

FIG. 2A illustrates that the enclosed chamber 2 can include gas phasenitrogen (illustrated as NH₃) from the gas phase species stream 10during the depositing. In this scenario, the gas phase nitrogen canstart to diffuse into the molten metal 13. The bottom left image in FIG.2 illustrates that the reaction between the gas phase nitrogen and themolten metal 13 can proceed to form a semiconductor material 23 on thesubstrate 4.

The bottom images of FIG. 2 illustrate that the method for printing thesemiconductor material 23 can comprise depositing a second molten metal113 onto the semiconductor material 23 (bottom right image) and allowingthe second molten metal 13 to react with the gas phase species in theenclosed chamber 2 to form the semiconductor material 23 having anincreased height in the z-direction (bottom right image). This additivemethod of forming 3D semiconductor material 23 with increased, andoptionally with varying heights in different locations along the traceor thin film, can result in a significant increase in the designflexibility.

The substrate 4 can be an atomically symmetric substrate 4. Thesubstrate 4 can be any substrate suitable for growth of an epitaxiallayer, for example, aluminum gallium nitride, aluminum nitride, aluminumindium gallium nitride, aluminum oxide (for example, sapphire), galliumarsenide, gallium indium nitride, gallium nitride, lithium aluminate,lithium gallate, magnesium oxide, silicon, silicon carbide, zinc oxide,diamond, quartz, or spinel. The substrate 4 can be a sapphire substrateor a silicon substrate. The substrate 4 can be a composite substrate.For example, a composite substrate can also be formed by providing amono-crystalline silicon substrate and then growing one or more bufferlayers of different crystalline films having intermediate latticeconstants to crystalline film that is ultimately desired, such as forexample a sapphire (Al₂O₃) crystalline film. The composite substrate cancomprise a buffer layer, for example, at least one of a gallium nitridelayer deposited by conventional methods, a ZnO layer, an LiAlO₂ layer,or an SiC layer. The substrate 4 can be patterned, for example, havingraised portions.

The molten metal 13 can comprise at least one of a molten, Group 13metal 13 and/or a molten silicon. The molten, Group 13 metal 13 cancomprise at least one of gallium, aluminum, or indium. The molten, Group13 metal 13 can consist essentially of gallium, or can consist of onlygallium. The molten, Group 13 metal 13 can comprise aluminum andgallium, or consist essentially of aluminum and gallium or can consistof aluminum and gallium alone, and can result in a semiconductormaterial 23 as a ternary compound, such as AlGaN with an even widerbandgap tailored to specific applications, making it an important basematerial for high-power devices.

The gas phase species stream 10 can be introduced at any time before,during, or after depositing the molten metal 13 on the substrate 4. Theinert gas stream 12 and the gas phase species stream 10 can beintroduced at the same or at different times. For example, the substrate4 can be placed in a chamber and the chamber can be sealed to result inthe enclosed chamber 2. The inert gas stream 12 can then be introducedto the enclosed chamber 2 and the molten metal 13 can be deposited in aninert environment on the substrate 4. During the depositing or after themolten metal 13 is deposited, the gas phase species stream 10 can beintroduced to the enclosed chamber 2.

The gas phase species stream 10 comprises a reactive gas species that iscapable of diffusing into the molten metal 13 and reacting therewith toform the semiconductor material 23. The gas phase species stream 10 cancomprise at least one of a gas phase nitrogen species or a gas phasearsenic species. The gas phase nitrogen species can comprise at leastone of ammonia (NH₃), hydrazine (N₂H₄), diimide (N₂H₂), or hydrazoicacid (HN₃). The gas phase nitrogen species can comprise NH₃. Theenclosed chamber 2 can further comprise an inert gas, for example,introduced in inert gas stream 12. The inert gas can comprise at leastone of hydrogen, argon, helium, or nitrogen. A volume ratio of the inertgas to the gas phase species can be 1.25 to 50, or 10 to 40. In order toreduce the formation of an oxide, the enclosed chamber 2 can compriseless than or equal to 1,000 parts per million (ppm), or 0 to 100 ppm byvolume of oxygen.

During the depositing, a temperature of the molten metal 13 can begreater than or equal to 30 degrees Celsius (° C.), or 30 to 50° C.After the molten metal 13 is deposited, a temperature in the enclosedchamber 2 can be increased to a reaction temperature. The reactiontemperature can be greater than or equal to 600° C., or 1,000 to 1,500°C., or 1,000 to 1,200° C. A pressure in the enclosed chamber 2 can begreater than or equal to 60 Torr, or 60 to 760 Torr.

The gas phase species reacts with the molten metal 13 at the reactiontemperature to form the semiconductor material 23. A crystallizationrate of the molten metal 13 to form the semiconductor material 23 can be0.035 to 3 micrometers per minute, or 0.035 to 0.3 micrometers perminute. The semiconductor material 23 can be a single crystal.

A p-type or n-type semiconductor material can be formed using thegas-phase reactive additive manufacturing method. The p-typesemiconductor material can comprise a p-type dopant, for example, atleast one of Mg, Be, Ca, Sr, or a Group 1 or 2 element having 1 or 2valence electrons. The n-type semiconductor material can comprise ann-type dopant, for example, at least one of a Group 14 (for example, Si,Ge, Sn, or Pb), Group 15, or Group 16 element of the Periodic Table. Therespective doped semiconductor materials can be formed by at least oneof adding a dopant to the molten metal 13 and printing the doped metalor introducing a gas phase dopant to the enclosed chamber 2 or acombination of introducing the dopant to the molten metal 13 andintroducing the gas phase dopant to the enclosed chamber 2. The gasphase dopant (for example, dicyclopentadienyl magnesium) can permeatethe molten metal 13 to result in a p-type or n-type semiconductormaterial.

Using the gas-phase reactive additive manufacturing method, a multilayersemiconductor material 23 can be formed. For example, a p-typesemiconductor layer can be formed, an undoped semiconductor layer can beformed on the p-type semiconductor layer, and an n-type semiconductorlayer can be formed on the undoped semiconductor layer.

An article can comprise the semiconductor material 23 formed by thepresent method. For example, the article can be a light emitting diode,a laser diode, or a transistor.

In an aspect, a method for printing a semiconductor material includesdepositing a molten metal comprising a Group 13 metal or silicon,preferably at least one of gallium, aluminum, or indium, onto asubstrate in an enclosed chamber to form a trace having at least one ofa maximum height of 15 micrometers (preferably a maximum height of 1 to12 micrometers), or a maximum width of 25 micrometers to 10 millimeters(preferably a maximum width of 100 micrometers to 2 millimeters), or athin film having a maximum height of 15 micrometers a maximum height of1 to 12 micrometers; reacting the molten metal, preferably at atemperature greater than or equal to 600° C., with a gas phase nitrogen-or arsenic-containing species, preferably at least one of ammonia,hydrazine, diimide, or hydrazoic acid, in the enclosed chamber to formthe semiconductor material; and translating at least one of an injectionorifice in the enclosed chamber or the substrate in an x-y plane duringthe depositing to form the trace of the molten metal on the substrate.

In this aspect, the enclosed chamber can further have an inert gaspresent, wherein a volume ratio of the inert gas to the gas phasespecies is 1.25 to 50. The gas phase species can be added to theenclosed chamber after the depositing. The molten metal can have acrystallization rate to form the semiconductor material of 0.035 to 3micrometers per minute. Particularly advantageous results can beobtained in these aspects where the substrate is an atomically symmetricsubstrate, preferably a sapphire substrate.

Still further in these aspects, the semiconductor material can be asingle crystal, and the molten metal can comprise a p-type dopant or ann-type dopant. Preferably, the p-type dopant or the n-type dopant can bepresent in the enclosed chamber as a gas phase that permeates the moltenmetal.

In a yet further feature of these aspects, the method can includedepositing a second molten metal onto the semiconductor material andallowing the second molten metal to react with the gas phase species inthe enclosed chamber to form the semiconductor material having anincreased height, preferably wherein the at least one of the moltenmetal or the second molten metal comprises a dopant.

The following examples are provided to illustrate the presentdisclosure. The examples are merely illustrative and are not intended tolimit devices made in accordance with the disclosure to the materials,conditions, or process parameters set forth therein.

EXAMPLES Example 1 Determination of the Crystal Phase Growth Rate

Computational modeling was used to estimate growth velocities in adecreased melt volume to illustrate the change in the overallcrystallization rate that arises from the decreased diffusion length ofthe gas phase species into the molten metal. Specifically, aone-dimensional diffusion model for NH₃ in molten Ga was used, presuminga concentration of NH₃ at the Ga surface at the solubility limit,c_(max), and total conversion to GaN at the solidification interface, sothat the flux of N species consumed by GaN growth was equal to thediffusive flux. The growth rate was thus predicted to increasetransiently as the Ga melt was consumed, and the resulting averagegrowth rate, ν, wasν=g(1+M _(N) /M _(Ga))ρ_(Ga)/ρ_(GaN) Dc _(max) /L ₀where M_(i) and ρ_(i) are the molar mass and density of the respectivematerials i, and D and c_(max) are the diffusivity and solubility of NH₃in molten Ga. Although the model is one-dimensional, the factor gaccounts for the geometry of the Ga melt based on the average distancethat NH₃ diffuses before conversion. Representative values of g are 1,1.6, and 2 for uniform thickness, half-cylinder, and half-sphere meltgeometries, respectively.

A half-sphere melt geometry was used to estimate a droplet of galliumdeposited onto a surface. At 1,000° C., the diffusivity was estimated as1.3×10⁻⁴ centimeters squared per second (cm² s⁻¹) and the solubility wasestimated as (1.0±0.8)×10⁻⁶ atomic percent, which imparts someuncertainty. The resulting velocities as a function of initial height ofa half-spherical droplet are shown in FIG. 3. Considering these growthvelocity estimations, including the uncertainty in the solubilityestimation as shown in FIG. 3, a 10 micrometer printed gallium layer isexpected to result in crystal growth rates of 0.035 to 0.30 micrometersper minute, values which are in the range of reported values for GaNfilms grown by metalorganic chemical vapor deposition (MOCVD). Based onthese results, initial experiments were performed to support thesecalculations and demonstrate improved crystallization rates at reducedmelt volumes in order to show the viability of the liquid-gas reactionprocess for a 3D printed semiconductor system.

It is noted that these calculations can be performed by additionalgeometries, to show that reducing the critical dimensions lowers thediffusion length and thereby increases the crystal growth rate.Half-sphere geometries are only used for example.

Example 2 Formation of GaN Traces on a Substrate Via Chemical VaporDeposition

A set of experiments was performed to test the increased crystallizationrate as compared to the rate proposed in the above model of Example 1.To isolate the effect of thickness from various printing parameters,gallium test patterns were deposited onto a c-plane sapphire substrate 4using thermal evaporation in conjunction with a shadow mask to create apattern of circles and bars with varying dimensions. Using the shadowmask, gallium patterns of various thicknesses were deposited in order totest the effect of thickness on crystallization time. After galliumdeposition, the patterns were placed in an enclosed chamber 2 with aN₂/NH₃ gas mixture flowing over the sample as the enclosed chamber 2 washeated to a reaction temperature of 1,050° C. The samples were then heldat temperature for various lengths of time to induce crystallization ofGaN within the pattern. N₂:NH₃ ratios from 1.25 to 50 were used byvarying the rate of NH₃ flow while holding the N₂ flow constant. Avisible transition of opaque gallium metal to transparent GaN wasobserved at high temperatures and was used as a rough metric oftimescale for initial crystallizations to ensure complete visualconversion before cooling the samples. Ex situ optical microscopy andx-ray diffraction (XRD) were performed to study the change in morphologyand degree of crystallization. Results from samples with varyingthicknesses of deposited gallium are shown in FIG. 4, where the asteriskdenotes an abraded sample.

It is noted that the 65 micrometer sample was submitted to a N₂:NH₃ratio of 1.25 in order to increase the rate of crystallization in thefinal sample as much as possible and was held at temperature for 30minutes, at which time the pattern visibly stopped transitioning fromopaque to transparent. All other samples shown in FIG. 4 were held attemperature for only 5 minutes with N₂:NH₃ of 25 and observed a similarvisible transition, despite the shorter time and lower NH₃ flow.

FIG. 4 shows that some GaN formation was observed in the 65 micrometersample, but the gallium metal peaks remained prominent in the XRDspectrum shown in FIG. 4 despite the longer time at temperature. Theseresults are in line with the modeling results in FIG. 3, which suggesteda crystallization time in excess of 2 hours would result in a fullconversion at this thickness. As deposition thickness was decreased to3.5 micrometers, the gallium peaks were significantly reduced, with onlya slight peak visible at 39.6 degrees (°) despite the lowercrystallization time and NH₃ flow. As thickness was decreased further,below 300 nanometers, no presence of GaN or significant gallium wasobserved in XRD, but a Ga₂O₃ peak remained. It is noted that the slightgallium peak at 39.6° remained in thinner samples, even atcrystallization times up to 30 minutes. Without being bound by theory,it is believed that this peak arises from residual gallium trapped inbetween polycrystalline GaN grains, preventing NH₃ diffusion and haltingfull conversion of the structure.

FIG. 4 further shows the presence of an oxide peak at all thicknesses,where the GaN was observed to form a native oxide, based on the Ga₂O₃peak. It is likely that an oxide formed on the evaporated galliumpatterns due to the time the sample was exposed to air while it wastransferred from the thermal evaporation chamber to the NH₃ annealingfurnace. These results show the advantage of an aspect of the presentmethod, where the depositing of the gallium and the crystallization canoccur in the same enclosed chamber 2, reducing or eliminating thepotential exposure to oxygen.

Example 3 Formation of GaN Traces on a Substrate Via Gas-Phase ReactiveAdditive Manufacturing

Molten gallium was extruded through a motor-controlled quartz needleonto a heated substrate 4 in an oxygen-free environment as isillustrated in FIG. 1. A mixture of N₂ and NH₃ was flowed into theenclosed chamber 2 after printing the molten gallium onto the substrate4 in order to convert gallium to GaN at elevated temperatures. Similarto the studies on thermally evaporated gallium of Example 2, initial GaNconversions were performed while flowing NH₃ and N₂ during the heatingprocess to saturate the printed gallium before conversion. The XYZ motorused to control the print head did not have Z resolution capabilitiesbelow 50 micrometers so the layer was suspected to be on the same orderof magnitude thickness as the 65 micrometers sample of Example 2. It isalso noted that the annealing systems were built to differentspecifications, which benefited from different optimized crystallizationconditions. Therefore, for the sake of brevity, specifics of gas flowrates and the optimization process are not reported on here and it isacknowledged that this is a best effort comparison based on relativeprocess optimization.

The XRD spectra showing the degree of crystallinity at the 65micrometers thermally evaporated gallium and the in situ printed galliumis shown in FIG. 5, where the flow rate of the nitrogen was 50 standardcubic centimeters per minute (sccm) for the samples 3-1 and 3-2, wherethe top trace, 3-2, was heated in an inert N₂ ambient prior tointroduction of the reacting NH₃ gas into the enclosed chamber 2. Amixture of inert N₂ and reacting NH₃ gas was submitted to the sampleindicated by the middle trace, 3-1, prior to and during heating. It isnoted that the gallium line printed directly into a controlled ambientwas only held at the crystallization temperature of 1,000° C. for 5minutes as compared to the 30 minutes for the thermally evaporated GaNof Example 2, despite the similar projected thicknesses. Surprisingly,despite the shorter crystallization time, a significant improvement inthe crystallinity was observed in the printed GaN as compared to that ofExample 2, the trace of which is shown in FIG. 5 for ease of comparison.Moreover, FIG. 5 shows that no remaining gallium or Ga₂O₃ peaks wereobserved in the spectra of the crystallized GaN material of Example 3,indicating that the controlled N₂ ambient was capable of preventingoxidation, resulting in faster, more complete crystal conversion.Additionally, Example 3 resulted in a single-crystal nature in XRDpost-conversion with a strong GaN(0002) peak and only a very slight peakobservable above the noise at the peak position for (10-11) GaN. Thissingle-crystal nature is shown in FIG. 8 and FIG. 9. FIG. 8 shows a 2theta-omega scan showing a single GaN peak in high resolution XRD andFIG. 9 shows a phi scan displaying 6 evenly spaced primary peaksindicating that there is a single rotational alignment to provideevidence that single crystal material was obtained.

Without intending to be bound by theory, the faster crystallization ofprinted gallium may have been partially due to the removal of the oxidelayer that acted as an NH₃ diffusion barrier in Example 2. Allcrystallizations reported up to this point were performed with heatingoccurring in a N₂/NH₃ ambient in order to saturate the gallium dropletand increase the crystallization rate.

Based on the faster observed crystallization rate of printed gallium, anadditional test, 3-1, was performed with heating in a N₂ ambient to tryto prevent crystallization below 1,000° C. to thereby improve thecrystal quality of the converted GaN. No significant change inconversion rate was observed when heating in a pure N₂ ambient (totaltime at temperature was still 5 minutes), but the crystal orientationwas improved slightly as shown by the decrease in the slight decrease inthe GaN(10-11) XRD peak as shown the inset of FIG. 5.

FIG. 6 is a cross-sectional SEM that was taken of the printed trace fromthe sample that was heated in a pure N₂ ambient to 1,000° C. before NH₃was flowed into the enclosed chamber 2 to induce crystallization. FIG. 6shows the formation of a 5 to 10 micrometer thick, coalesced GaN filmwith some roughness growing epitaxially from the sapphire substrate 4.Finally, taking the thickness of the coalesced region and thecrystallization time of 5 minutes into account, an estimated growth rateof 1 to 2 micrometers per minute was obtained. This growth rate iscomparable to that achievable by MOCVD or hydride vapor phase epitaxy(HVPE), indicating the viability of the GRAM process to create complexstructures without sacrificing growth rate over commercially usedmethods. This growth rate is, however, significantly faster than thehighest rate predicted by earlier models, indicating that there may beother factors affecting the growth rate in printed gallium structures.These results demonstrate the potential of the GRAM process forlocalized printing of single-crystal semiconductor GaN.

FIG. 7 is a cross-sectional SEM that was taken from an area surroundingthe printed trace. FIG. 7 shows that in some regions proximal to theprinted trace, rough, uncoalesced, and seemingly polycrystalline GaNislands are formed. Based on the presence of GaN outside the printedline, it is believed that there is some migration of gallium during thecrystallization process.

Set forth below are non-limiting aspects of the present disclosure.

Aspect 1: A method for printing a semiconductor material, comprising:depositing a molten metal onto a substrate in an enclosed chamber toform a trace having at least one of a maximum height of 15 micrometersor a maximum width of 25 micrometers to 10 millimeters or a thin filmhaving a maximum height of 15 micrometers; and reacting the molten metalwith a gas phase species in the enclosed chamber to form thesemiconductor material.

Aspect 2: The method of aspect 1, further comprising translating atleast one of an injection orifice in the enclosed chamber or thesubstrate in an x-y plane during the depositing to form the trace of themolten metal on the substrate.

Aspect 3: The method of any one of the preceding aspects, wherein themolten metal comprises at least one of a molten, Group 13 metal orsilicon, and wherein the molten, Group 13 metal comprises at least oneof gallium, aluminum, or indium.

Aspect 4: The method of any one of the preceding aspects 1, wherein thegas phase species comprises at least one of a gas phase nitrogen speciesor a gas phase arsenic species, and wherein the gas phase speciesfurther comprises at least one of ammonia (NH₃), hydrazine (N₂H₄),diimide (N₂H₂), or hydrazoic acid (HN₃).

Aspect 5: The method of any one of the preceding aspects, wherein theenclosed chamber further comprises an inert gas, and wherein a volumeratio of the inert gas to the gas phase species is 1.25 to 50.

Aspect 6: The method of any one of the preceding aspects, furthercomprising adding the gas phase species to the enclosed chamber afterthe depositing.

Aspect 7: The method of any one of the preceding aspects, wherein atemperature of the molten metal during the depositing is greater than orequal to 30° C.

Aspect 8: The method of any one of the preceding aspects, wherein atemperature during the reacting is greater than or equal to 600° C.

Aspect 9: The method of any one of the preceding aspects, wherein thesemiconductor material is a single crystal.

Aspect 10: The method of any one of the preceding aspects, wherein themolten metal comprises a p-type dopant.

Aspect 11: The method of any one of the preceding aspects, wherein themolten metal comprises an n-type dopant.

Aspect 12: The method of any one of the preceding aspects, wherein theenclosed chamber further comprises a gas phase, p-type dopant, andwherein the gas phase, p-type dopant permeates the molten metal.

Aspect 13: The method of any one of the preceding aspects, wherein theenclosed chamber further comprises a gas phase, n-type dopant, andwherein the gas phase, n-type dopant permeates the molten metal.

Aspect 14: The method of any one of the preceding aspects, furthercomprising depositing a second molten metal onto the semiconductormaterial and allowing the second molten metal to react with the gasphase species in the enclosed chamber to form the semiconductor materialhaving an increased height.

Aspect 15: The method of Aspect 14, wherein at least one of the moltenmetal or the second molten metal comprises a dopant.

Aspect 16: The method of any one of the preceding aspects, wherein acrystallization rate of the molten metal to form the semiconductormaterial is 0.035 to 3 micrometers per minute.

Aspect 17: The method of any one of the preceding aspects, wherein thesubstrate is an atomically symmetric substrate.

Aspect 18: The method of any one of the preceding aspects, wherein thesubstrate is a sapphire substrate.

Aspect 19: The method of any one of the preceding aspects, wherein thetrace or the thin film has a maximum height of 1 to 12 micrometers.

Aspect 20: The method of any one of the preceding aspects, wherein thetrace has a maximum width of 100 micrometers to 2 millimeters.

The compositions, methods, and articles can alternatively comprise,consist of, or consist essentially of, any appropriate materials, steps,or components herein disclosed. The compositions, methods, and articlescan additionally, or alternatively, be formulated so as to be devoid, orsubstantially free, of any materials (or species), steps, or components,that are otherwise not necessary to the achievement of the function orobjectives of the compositions, methods, and articles.

The terms “a” and “an” do not denote a limitation of quantity, butrather denote the presence of at least one of the referenced item. Theterm “or” means “and/or” unless clearly indicated otherwise by context.Reference throughout the specification to “an aspect”, “an embodiment”,“another embodiment”, “some embodiments”, and so forth, means that aparticular element (e.g., feature, structure, step, or characteristic)described in connection with the embodiment is included in at least oneembodiment described herein, and may or may not be present in otherembodiments. In addition, it is to be understood that the describedelements may be combined in any suitable manner in the variousembodiments.

When an element such as a layer, film, region, or substrate is referredto as being “on” another element, it can be directly on the otherelement or intervening elements can also be present. In contrast, whenan element is referred to as being “directly on” another element, thereare no intervening elements present.

The endpoints of all ranges directed to the same component or propertyare inclusive of the endpoints, are independently combinable, andinclude all intermediate points and ranges. For example, ranges of “upto 25° C., or 5 to 20° C.” is inclusive of the endpoints and allintermediate values of the ranges of “5 to 25° C.,” such as 10 to 23°C., etc.

The term “at least one of” means that the list is inclusive of eachelement individually, as well as combinations of two or more elements ofthe list, and combinations of at least one element of the list with likeelements not named. Also, the term “combination” is inclusive of blends,mixtures, alloys, reaction products, and the like.

Unless defined otherwise, technical and scientific terms used hereinhave the same meaning as is commonly understood by one of skill in theart to which this disclosure belongs.

All cited patents, patent applications, and other references areincorporated herein by reference in their entirety. However, if a termin the present application contradicts or conflicts with a term in theincorporated reference, the term from the present application takesprecedence over the conflicting term from the incorporated reference.

While particular embodiments have been described, alternatives,modifications, variations, improvements, and substantial equivalentsthat are or may be presently unforeseen may arise to applicants orothers skilled in the art. Accordingly, the appended claims as filed andas they may be amended are intended to embrace all such alternatives,modifications variations, improvements, and substantial equivalents.

What is claimed is:
 1. A method for forming a semiconductor material,comprising: depositing a molten metal onto a substrate in an enclosedchamber to form a trace of the molten metal having at least one of amaximum height of 15 micrometers or a maximum width of 25 micrometers to10 millimeters; wherein the depositing comprises translating at leastone of the injection orifice or the substrate in an x-y plane whiledepositing the molten metal from the injection orifice onto thesubstrate; or depositing the molten metal onto the substrate in theenclosed chamber to form a thin film of the molten metal having amaximum height of 15 micrometers; and reacting the molten metal with agas phase species in the enclosed chamber to form the semiconductormaterial; wherein a crystallization rate of the molten metal to form thesemiconductor material is 0.035 to 3 micrometers per minute.
 2. Themethod of claim 1, comprising the translating to form the trace of themolten metal on the substrate.
 3. The method of claim 1, wherein themolten metal comprises at least one of a molten, Group 13 metal orsilicon, and wherein the molten, Group 13 metal comprises at least oneof gallium, aluminum, or indium.
 4. The method of claim 1, wherein thegas phase species comprises at least one of a gas phase nitrogen speciesor a gas phase arsenic species, and wherein the gas phase speciesfurther comprises at least one of ammonia (NH₃), hydrazine (N₂H₄),diimide (N₂H₂), or hydrazoic acid (HN₃).
 5. The method of claim 1,wherein the enclosed chamber further comprises an inert gas, and whereina volume ratio of the inert gas to the gas phase species is 1.25 to 50.6. The method of claim 1, further comprising adding the gas phasespecies to the enclosed chamber after the depositing.
 7. The method ofclaim 1, wherein a temperature of the molten metal during the depositingis greater than or equal to 30° C.
 8. The method of claim 1, wherein atemperature during the reacting is greater than or equal to 600° C. 9.The method of claim 1, wherein the semiconductor material is a singlecrystal.
 10. The method of claim 1, wherein the molten metal comprises ap-type dopant.
 11. The method of claim 1, wherein the molten metalcomprises an n-type dopant.
 12. The method of claim 1, wherein theenclosed chamber further comprises a gas phase, p-type dopant, andwherein the gas phase, p-type dopant permeates the molten metal.
 13. Themethod of claim 1, wherein the enclosed chamber further comprises a gasphase, n-type dopant, and wherein the gas phase, n-type dopant permeatesthe molten metal.
 14. The method of claim 1, wherein the substrate is anatomically symmetric substrate.
 15. The method of claim 1, wherein thesubstrate is a sapphire substrate.
 16. The method of claim 1, whereinthe trace or the thin film has a maximum height of 1 to 12 micrometers.17. The method of claim 1, wherein the trace has a maximum width of 100micrometers to 2 millimeters.
 18. A method for forming a semiconductormaterial, comprising: depositing a molten metal onto a substrate in anenclosed chamber to form a trace of the molten metal having at least oneof a maximum height of 15 micrometers or a maximum width of 25micrometers to 10 millimeters; wherein the depositing comprisestranslating at least one of the injection orifice or the substrate in anx-y plane while depositing the molten metal from the injection orificeonto the substrate; or depositing the molten metal onto the substrate inthe enclosed chamber such that is forms a thin film of the molten metalhaving a maximum height of 15 micrometers; and reacting the molten metalwith a gas phase species in the enclosed chamber to form thesemiconductor material; and depositing a second molten metal onto thesemiconductor material and allowing the second molten metal to reactwith the gas phase species in the enclosed chamber to form thesemiconductor material having an increased height.
 19. The method ofclaim 18, wherein at least one of the molten metal or the second moltenmetal comprises a dopant.
 20. The method of claim 18, wherein acrystallization rate of the molten metal to form the semiconductormaterial is 0.035 to 3 micrometers per minute.